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SSM3K16FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FS
High Speed Switching Applications Analog Switch Applications
* * Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 20 10 100 200 100 150 -55~150 Unit V V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC
Note:
JEITA Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2H1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
Internal connections
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3K16FS
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min 20 0.6 40 Typ. 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max 1 1 1.1 3.0 4.0 15 pF pF pF ns Unit A V A V mS
Switching Time Test Circuit
(a) Test circuit
2.5 V 0 10 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C OUT IN 50 RL VDD 0V 10%
(b) VIN
2.5 V 90%
(c) VOUT
VDD
10% 90% tr ton toff tf
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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ID - VDS
250 2.5 Common source Ta = 25C 2.1 1.9 150 1000 Common source VDS = 3 V
ID - VGS
(mA)
10
(mA)
200
43
2.3
100 Ta = 100C 10 25C 1
Drain current
ID
Drain current
ID
100
1.7
-25C
50
1.5 VGS = 1.3 V
0.1
0 0
0.5
1
1.5
2
0.01 0
1
2
3
Drain-Source voltage
VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) - ID
12 Common source Ta = 25C 6
RDS (ON) - VGS
Common source ID = 10 mA
Drain-Source on resistance RDS (ON) ()
8 VGS = 1.5 V
Drain-Source on resistance RDS (ON) ()
10
5
4
6
3 Ta = 100C 25C 1 -25C
4 2.5 V 2 4V 0 1 10 100 1000
2
0 0
2
4
6
8
10
Drain current
ID
(mA)
Gate-Source voltage
VGS
(V)
RDS (ON) - Ta
8 Common source 7 2
Vth - Ta Vth (V)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Common source ID = 0.1 mA VDS = 3 V
Drain-Source on resistance RDS (ON) ()
6 5 4 3 2 1 0 -25
VGS = 1.5 V, ID = 1 mA
2.5 V, 10 mA
4 V, 10 mA
0
25
50
75
100
125
150
Ambient temperature
Ta
(C)
Gate threshold voltage
Ambient temperature
Ta
(C)
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SSM3K16FS
Yfs - ID
500 300 Common source VDS = 3 V Ta = 25C 100 50 250
IDR - VDS (mA)
Common source VGS = 0 V Ta = 25C D 150 IDR S 100
Forward transfer admittance Yfs (mS)
200
Drain reverse voltage
IDR
30
G
10 5 3
50
1 1
10
100
1000
0 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Drain current
ID
(mA)
Drain-Source voltage
VDS
(V)
C - VDS
100 50 5000 3000 toff 1000 500 300 tf
t - ID
Common source VDD = 3 V VGS = 0~2.5 V Ta = 25C
(pF)
C
10 5 Ciss Coss Crss
Switching time
Capacitance
t
Common source
(ns)
100 ton 50 30 tr
1 VGS = 0 V f = 1 MHz Ta = 25C 0.3 0.1 0.5 1 5 10 50 100
10 0.1
1
10
100
Drain-Source voltage
VDS
(V)
Drain current
ID
(mA)
PD - Ta
250
(mW) Drain power dissipation PD
200
150
100
50
0 0
20
40
60
80
100
120
140
160
Ambient temperature
Ta
(C)
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SSM3K16FS
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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